Os motores de busca de Datasheet de Componentes eletrônicos |
|
STP22NM60N Folha de dados(PDF) 5 Page - STMicroelectronics |
|
STP22NM60N Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 23 page STB/F/I/P/W22NM60N Electrical characteristics Doc ID 15853 Rev 4 5/23 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr(v) td(off) tf(i) Turn-on delay time Voltage rise time Turn-off delay time Fall time VDD = 300 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 11 18 74 38 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 16 64 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 16 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) - 296 4 26.8 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 19) - 350 4.7 27 ns µC A |
Nº de peça semelhante - STP22NM60N |
|
Descrição semelhante - STP22NM60N |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |