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ACE1551B Folha de dados(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1551B Folha de dados(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE1551B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE1551B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers. Features V DS =20V I D=0.7A R DS(ON) <360m Ω (V GS=4.5V) R DS(ON) <420m Ω (V GS=2.5V) R DS(ON) <560m Ω (V GS=1.8V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current * AC TA=25℃ ID 700 mA TA=70℃ 560 Pulsed Drain Current * B IDM 1 A Power Dissipation TA=25℃ PD 0.27 W TA=70℃ 0.16 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type SOT-723 |
Nº de peça semelhante - ACE1551B |
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Descrição semelhante - ACE1551B |
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