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ACE1632B Folha de dados(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1632B Folha de dados(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1632B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. This device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Features V DS =60V, ID=18A, VGS 20V R DS(ON) <40m Ω @V GS=10V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Maximum Drain Current Continuous ID 18 A Pulsed 45 Continuous Power Dissipation (large heatsick) PD 110 W Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC Packaging Type TO-252 D G S |
Nº de peça semelhante - ACE1632B |
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Descrição semelhante - ACE1632B |
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