DZ3S068D0L datasheet(1/4 Pages) PANASONIC

Nome de Peças	DZ3S068D0L

Descrição Electrónicos	Silicon epitaxial planar type For surge absorption circuit

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Fabricante Electrônico	PANASONIC [Panasonic Semiconductor]

Página de início	http://www.panasonic.com/industrial/

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Ver. CED

Publication date: July 2012

1

DZ3S068D

Silicon epitaxial planar type

For surge absorption circuit



Features



Excellent rising characteristics of zener current IZ



Low zener operating resistance RZ



Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)



Marking Symbol: 02



Packaging

DZ3S068D0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)



Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Unit

Total power dissipation *1

PT

150

mW

Electrostatic discharge *2

ESD

±

10

kV

Junction temperature

Tj

150

°

C

Storage temperature

Tstg

–55 to +150

°

C

Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) (2 Diode total)

Solder in ( 0.6 mm × 0.6 mm)

*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)



Common Electrical Characteristics Ta = 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

VF

IF = 10 mA

1.0

V

Zener voltage *1, 2

VZ

IZ = 5 mA

6.46

7.14

V

Zener operating resistance

RZ

IZ = 5 mA

30

Ω

Zener rise operating resistance

RZK

IZ = 0.5 mA

60

Ω

Reverse current

IR

VR = 4 V

0.1

µA

Temparature coefﬁcient of zener voltage *3

SZ

IZ = 5 mA

3.1

mV/°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)

*2: VZ guaranteed 20 ms after current ﬂow.

*3: Tj = 25°C to 150°C

Unit: mm

1: Cathode-1

2: Cathode-2

3: Anode-1, 2

Panasonic

SSMini3-F3-B

JEITA

SC-89

Code

SOT-490

1

2

3

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