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FDC6310P Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDC6310P Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page April 2001 ©2001 Fairchild Semiconductor Corporation FDC6310P Rev C(W) FDC6310P Dual P-Channel 2.5V Specified PowerTrench® ® MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • Load switch • Battery protection • Power management Features • –2.2 A, –20 V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 m Ω @ VGS = –2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick) D1 S2 G1 D2 S1 G2 SuperSOT -6 TM 3 2 1 4 5 6 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –2.2 A – Pulsed –6 Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b) 0.9 PD (Note 1c) 0.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .310 FDC6310P 7’’ 8mm 3000 units |
Nº de peça semelhante - FDC6310P |
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Descrição semelhante - FDC6310P |
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