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FDC6312P Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDC6312P
Descrição Electrónicos  Dual P-Channel 1.8V PowerTrench Specified MOSFET
Download  5 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC6312P Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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FDC6312P Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–11
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.9
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
2
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –2.3 A
VGS = –2.5 V,
ID = –1.9 A
VGS = –1.8 V,
ID = –1.6 A
VGS=–4.5 V, ID =–2.3A, TJ=125
°C
92
116
166
112
115
155
225
150
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–7
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –3.5 A
5.3
S
Dynamic Characteristics
Ciss
Input Capacitance
467
pF
Coss
Output Capacitance
85
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
38
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
13
23
ns
td(off)
Turn–Off Delay Time
18
32
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
816
ns
Qg
Total Gate Charge
4.4
7
nC
Qgs
Gate–Source Charge
1.0
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –2.3 A,
VGS = –4.5 V
0.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.8
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.8 A (Note 2)
–0.7
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 130
°C/W when
mounted on a 0.125
in
2 pad of 2 oz.
copper.
b) 140°/W when mounted
on a .004 in
2 pad of 2 oz
copper
c) 180°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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