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FDC640P Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FDC640P
Descrição Electrónicos  P-Channel 2.5V Specified PowerTrenchTM MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC640P Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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FDC640P, Rev.C
FDC640P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
August 2000
2000 Fairchild Semiconductor International
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
- Continuous
(Note 1a)
-4.5
A
Drain Current
- Pulsed
-20
PD
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.640
FDC640P
7’’
8mm
3000 units
Features
-4.5 A, -20 V. R
DS(ON) = 0.050 Ω @ VGS = -4.5 V
R
DS(ON)
= 0.077
Ω @ V
GS = -2.5 V
Rugged gate rating (
±12V).
High performance trench technology for extremely
low R
DS(ON).
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
3
5
6
4
1
2
3
D
D
D
S
D
G
SuperSOT -6
TM
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages.
Applications
Load switch
Battery protection
Power management


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