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FDD6035AL Folha de dados(PDF) 3 Page - Fairchild Semiconductor

Nome de Peças FDD6035AL
Descrição Electrónicos  N-Channel, Logic Level, PowerTrench MOSFET
Download  6 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6035AL Folha de dados(HTML) 3 Page - Fairchild Semiconductor

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FDD6035AL Rev. D(W)
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.3
A
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V,
IS = 2.3 A
(Note 2)
0.76
1.2
V
trr
Diode Reverse Recovery Time
24
nS
Qrr
Diode Reverse Recovery Charge
IF = 12 A,
diF/dt = 100 A/µs
13
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in
2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A


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