FDN338P datasheet(4/4 Pages) FAIRCHILD

Nome de Peças	FDN338P

Descrição Electrónicos	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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FDN338P Rev.D

0

2

4

6

8

0

1

2

3

4

5

Q , GATE CHARGE (nC)

g

V

= -5V

DS

I = -1.6A

D

-15V

0.1

0.2

0.5

1

2

5

10

20

40

0.01

0.05

0.1

0.5

1

2

5

10

- V

, DRAIN-SOURCE VOLTAGE (V)

RDS(ON)

LIMIT

A

DC

DS

1s

100ms

10ms

1ms

10s

V

= -4.5V

SINGLE PULSE

R

=250°C/W

T

= 25°C

θJA

GS

A

0.0001

0.001

0.01

0.1

1

10

100 300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=250° C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

R

(t) = r(t) * R

R

= 250 °C/W

Duty Cycle, D = t /t

1

2

θJA

T - T

= P * R

(t)

θJA

A

J

P(pk)

t1

t 2

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Figure 11. Transient Thermal Response Curve.

0.1

0.2

0.5

1

2

5

10

20

50

100

200

400

600

1000

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics

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FDN338P Folha de dados(PDF) 4 Page - Fairchild Semiconductor

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