Os motores de busca de Datasheet de Componentes eletrônicos |
|
KSE340S Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
|
KSE340S Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A1, December 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V ICBO Collector Cut-off Current VCB = 300V, IE =0 100 µA IEBO Emitter Cut-off Current VBE = 3V, IC = 0 100 µA hFE DC Current Gain VCE = 10V, IC = 50mA 30 240 KSE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE350 1 TO-126 1. Emitter 2.Collector 3.Base |
Nº de peça semelhante - KSE340S |
|
Descrição semelhante - KSE340S |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |