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FDT434P Folha de dados(PDF) 3 Page - Fairchild Semiconductor

Nome de Peças FDT434P
Descrição Electrónicos  P-Channel 2.5V Specified PowerTrench MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDT434P Folha de dados(HTML) 3 Page - Fairchild Semiconductor

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FDT434P Rev. C1 (W)
Typical Characteristics
01
234
5
0
4
8
12
16
20
-V
, DRAIN- SOURCEVOLTAGE(V)
V
= - 4.5V
GS
- 2.5V
DS
- 2. 0V
-3. 0V
-1. 5V
0
5
10
15
20
0.8
1
1.2
1.4
1.6
1.8
- I , DRAIN CURRENT (A)
V
= -2.5V
GS
D
-4.5V
-3.0V
-4.0V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
V
= - 4.5V
GS
I = - 6 A
D
J








     

25°C
T =125°C
A
I
= -6 A
D
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0
3
6
9
12
15
-V
, GATE TO SOURCE VOLTAGE (V)
V
= -5V
DS
GS
T = -55°C
J
125°C
25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
1
15
-V
, BODY DIODE FORWARD VOLTAGE (V)
25°C
-55°C
V
= 0V
GS
SD
T = 125°C
J
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.


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