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FGB20N6S2 Folha de dados(PDF) 4 Page - Fairchild Semiconductor

Nome de Peças FGB20N6S2
Descrição Electrónicos  600V, SMPS II Series N-Channel IGBT
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGB20N6S2 Folha de dados(HTML) 4 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
150
ICE , COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
24
68
10
14
0
300
250
350
50
TJ = 25
oC, T
J = 125
oC, V
GE = 10V
12
TJ = 25
oC, T
J = 125
oC, V
GE = 15V
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 125
oC, V
GE = 10V, VGE = 15V
TJ = 25
oC, V
GE = 10V, VGE = 15V
24
68
10
14
012
150
100
200
0
350
300
250
50
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
6
7
8
9
10
2
4
6
8
10
14
0
TJ = 25
oC, T
J = 125
oC, V
GE = 15V
TJ = 25
oC, T
J = 125
oC, V
GE = 10V
11
12
13
12
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 25
oC, T
J = 125
oC, V
GE = 10V
TJ = 25
oC, T
J = 125
oC, V
GE =15V
2
4
6
8
10
14
012
0
5
10
15
20
25
30
35
RG = 25Ω, L = 500µH, VCE = 390V
80
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
140
120
100
VGE = 10V, VGE = 15V, TJ = 25
oC
VGE = 10V, VGE = 15V, TJ = 125
oC
2
4
6
8
10
14
012
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 25
oC, V
GE = 10V or 15V
TJ = 125
oC, V
GE = 10V or 15V
2
4
6
8
10
14
012
60
40
120
100
80
RG = 25Ω, L = 500µH, VCE = 390V


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