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FGB30N6S2 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FGB30N6S2
Descrição Electrónicos  600V, SMPS II Series N-Channel IGBT
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49367.
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Device Maximum Ratings T
C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES
Collector to Emitter Breakdown Voltage
600
V
IC25
Collector Current Continuous, TC = 25°C
45
A
IC110
Collector Current Continuous, TC = 110°C
20
A
ICM
Collector Current Pulsed (Note 1)
108
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS
Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150
mJ
PD
Power Dissipation Total TC = 25°C
167
W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Package
Symbol
C
E
G
TO-247
E
C
G
TO-263AB
TO-220AB E
C
G
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)


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