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FGB30N6S2D Folha de dados(PDF) 6 Page - Fairchild Semiconductor

Nome de Peças FGB30N6S2D
Descrição Electrónicos  600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGB30N6S2D Folha de dados(HTML) 6 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves (Continued)
0.5
1.0
1.5
2.5
VEC, FORWARD VOLTAGE (V)
02.0
0
8
12
16
25oC
125oC
4
24
20
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%,
3.0
100
50
0
IEC, FORWARD CURRENT (A)
212
10
125
75
25
68
150
200
25oC trr
25oC ta
25oC tb
125oC tb
125oC ta
dIEC/dt = 200A/µs, VCE = 390V
125oC trr
4
175
125oC ta
125oC tb
25oC ta
25oC tb
IEC = 12A, VCE = 390V
300
400
500
700
800
dIEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
200
600
50
0
75
100
125
150
175
900
1000
25
250
150
50
0
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
500
300
200
100
200
300
400
900
600
700
800
125oC, IEC = 12A
125oC, IEC = 6A
25oC, IEC = 6A
25oC, IEC = 12A
VCE = 390V
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
3.0
6.0
5.5
7.0
6.5
VCE = 390V, TJ = 125°C
IEC = 12A
IEC = 6A
700
1000
900
400
200
500
600
800
300
4.0
3.5
5.0
4.5
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
3
7
6
10
8
VCE = 390V, TJ = 125°C
IEC = 12A
IEC = 6A
700
1000
900
400
200
500
600
800
300
5
4
9


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