Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

STD8NM50N Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STD8NM50N
Descrição Electrónicos  N-channel 500 V, 0.73typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages
Download  19 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD8NM50N Folha de dados(HTML) 4 Page - STMicroelectronics

  STD8NM50N Datasheet HTML 1Page - STMicroelectronics STD8NM50N Datasheet HTML 2Page - STMicroelectronics STD8NM50N Datasheet HTML 3Page - STMicroelectronics STD8NM50N Datasheet HTML 4Page - STMicroelectronics STD8NM50N Datasheet HTML 5Page - STMicroelectronics STD8NM50N Datasheet HTML 6Page - STMicroelectronics STD8NM50N Datasheet HTML 7Page - STMicroelectronics STD8NM50N Datasheet HTML 8Page - STMicroelectronics STD8NM50N Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 19 page
background image
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
4/19
Doc ID 17413 Rev 6
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 500 V
VDS = 500 V, TC = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
0.73
0.79
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
364
33
1.2
-
pF
pF
pF
Coss(eq)
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance time
related
VDS = 0 to 50 V, VGS = 0
-
147.5
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 5 A,
VGS = 10 V
(see Figure 16)
-
14
3
7
-
nC
nC
nC


Nº de peça semelhante - STD8NM50N

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
STD8NM50N STMICROELECTRONICS-STD8NM50N Datasheet
1Mb / 19P
   N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
logo
Inchange Semiconductor ...
STD8NM50N ISC-STD8NM50N Datasheet
324Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Descrição semelhante - STD8NM50N

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
STF8NM50N STMICROELECTRONICS-STF8NM50N Datasheet
1Mb / 19P
   N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
STD9NM40N STMICROELECTRONICS-STD9NM40N Datasheet
1Mb / 18P
   N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages
STP11NM65N STMICROELECTRONICS-STP11NM65N Datasheet
1Mb / 21P
   N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages
STD2N105K5 STMICROELECTRONICS-STD2N105K5 Datasheet
1Mb / 21P
   N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
November 2014 Rev 3
STF11N65M5 STMICROELECTRONICS-STF11N65M5 Datasheet
1Mb / 25P
   N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
December 2012 Rev 2
STP7N65M2 STMICROELECTRONICS-STP7N65M2 Datasheet
881Kb / 18P
   N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages
May 2015 Rev 3
STP16N60M2 STMICROELECTRONICS-STP16N60M2 Datasheet
453Kb / 16P
   N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages
March 2015 Rev 1
STD11N65M5 STMICROELECTRONICS-STD11N65M5 Datasheet
1Mb / 25P
   N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
STD14NM50N STMICROELECTRONICS-STD14NM50N Datasheet
1Mb / 26P
   N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
STB14NM50N STMICROELECTRONICS-STB14NM50N Datasheet
1Mb / 26P
   N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com