FQP50N06 datasheet(3/8 Pages) FAIRCHILD

Nome de Peças	FQP50N06

Descrição Electrónicos	60V LOGIC N-Channel MOSFET

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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Rev. A1. May 2001

0

10

2030

4050

0

2

4

6

8

10

12

V

DS = 30V

V

DS = 48V

※ Note : I

D = 52.4A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

10

2

175℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

25

50

75

100

125

150

175

200

0

10

20

30

40

50

60

V

GS = 10V

V

GS = 5V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

02468

10

0

10

1

10

2

175℃

25℃

-55℃

※ Notes :

1. V

DS = 25V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

Bottom: 3.0 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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