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FQP55N10 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQP55N10 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2000 Fairchild Semiconductor International August 2000 Rev. A, August 2000 QFET QFET QFET QFETTM FQP55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V • Low gate charge ( typical 75 nC) • Low Crss ( typical 130 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP55N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 55 A - Continuous (TC = 100°C) 38.9 A IDM Drain Current - Pulsed (Note 1) 220 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 55 A EAR Repetitive Avalanche Energy (Note 1) 15.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) 155 W - Derate above 25°C 1.03 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.97 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220 FQP Series G S D |
Nº de peça semelhante - FQP55N10 |
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Descrição semelhante - FQP55N10 |
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