©2001 Fairchild Semiconductor Corporation

HUFA75321P3, HUFA75321S3S Rev. B

Absolute Maximum Ratings

UNITS

55

V

55

V

±20

V

Drain Current

35

Figure 4

A

Figures 6, 14, 15

93

0.625

W

-55 to 175

Maximum Temperature for Soldering

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

55

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

-

250

µA

Gate to Source Leakage Current

-

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

2

-

4

V

Drain to Source On Resistance

-

0.028

0.034

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

(Figure 3)

-

-

1.6

Thermal Resistance Junction to Ambient

TO-220, TO-263

-

-

62

Turn-On Time

--

100

ns

Turn-On Delay Time

-11

-

ns

Rise Time

-55

-

ns

Turn-Off Delay Time

-47

-

ns

Fall Time

-66

-

ns

Turn-Off Time

--

170

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

(Figure 13)

-36

44

nC

Gate Charge at 10V

-

21

26

nC

Threshold Gate Charge

-

1.3

1.6

nC

Gate to Source Gate Charge

-3-

nC

Reverse Transfer Capacitance

-9-

nC

HUFA75321P3, HUFA75321S3S