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HUFA76413DK8T Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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HUFA76413DK8T Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2003 Fairchild Semiconductor Corporation Rev. B Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 5V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 20mH, IAS = 5.1A 2: RθJA is 50 oC/W when mounted on a 0.5 in2 copper pad on FR-4 at 1 second. 3: RθJA is 191 oC/W when mounted on a 0.027 in2 copper pad on FR-4 at 1000 seconds. 4: RθJA is 228 oC/W when mounted on a 0.006 in2 copper pad on FR-4 at 1000 seconds. Device Marking Device Package Reel Size Tape Width Quantity 76413DK8 HUFA76413DK8T SO-8 330mm 12mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TA = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±16V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 - 3 V rDS(ON) Drain to Source On Resistance ID = 5.1A, VGS = 10V - 0.041 0.049 Ω ID = 4.8A, VGS = 5V - 0.048 0.056 ID = 4.8A, VGS = 5V TA = 150 oC - 0.091 0.106 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 620 - pF COSS Output Capacitance - 180 - pF CRSS Reverse Transfer Capacitance - 30 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 4.8A Ig = 1.0mA 18 23 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 10 13 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 0.6 0.8 nC Qgs Gate to Source Gate Charge - 1.8 - nC Qgd Gate to Drain “Miller” Charge - 5 - nC tON Turn-On Time VDD = 30V, ID = 1A VGS = 5V, RGS = 16Ω - - 44 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 19 - ns td(OFF) Turn-Off Delay Time - 45 - ns tf Fall Time - 27 - ns tOFF Turn-Off Time - - 108 ns VSD Source to Drain Diode Voltage ISD = 4.8A - - 1.25 V ISD = 2.4A - - 1.0 V trr Reverse Recovery Time ISD = 4.8A, dISD/dt = 100A/µs- - 43 ns QRR Reverse Recovered Charge ISD = 4.8A, dISD/dt = 100A/µs- - 55 nC |
Nº de peça semelhante - HUFA76413DK8T |
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Descrição semelhante - HUFA76413DK8T |
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