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ADuC841BS62-3 Folha de dados(PDF) 32 Page - Analog Devices |
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ADuC841BS62-3 Folha de dados(HTML) 32 Page - Analog Devices |
32 / 88 page ADuC841/ADuC842/ADuC843 Rev. 0 | Page 32 of 88 A 4 kByte Flash/EE data memory space is also provided on- chip. This may be used as a general-purpose nonvolatile scratchpad area. User access to this area is via a group of six SFRs. This space can be programmed at a byte level, although it must first be erased in 4-byte pages. Flash/EE Memory Reliability The Flash/EE program and data memory arrays on the parts are fully qualified for two key Flash/EE memory characteristics: Flash/EE memory cycling endurance and Flash/EE memory data retention. Endurance quantifies the ability of the Flash/EE memory to be cycled through many program, read, and erase cycles. In real terms, a single endurance cycle is composed of four independ- ent, sequential events, defined as 1. Initial page erase sequence. 2. Read/verify sequence a single Flash/EE. 3. Byte program sequence memory. 4. Second read/verify sequence endurance cycle. In reliability qualification, every byte in both the program and data Flash/EE memory is cycled from 00H to FFH until a first fail is recorded, signifying the endurance limit of the on-chip Flash/EE memory. As indicated in the Specifications table, the parts’ Flash/EE memory endurance qualification has been carried out in accordance with JEDEC Retention Lifetime Specification A117 over the industrial temperature range of –40°C to +25°C and +25°C to +85°C. The results allow the specification of a mini- mum endurance figure over supply and over temperature of 100,000 cycles, with an endurance figure of 700,000 cycles being typical of operation at 25°C. Retention quantifies the ability of the Flash/EE memory to retain its programmed data over time. Again, the parts have been qualified in accordance with the formal JEDEC Retention Lifetime Specification (A117) at a specific junction temperature (TJ = 55°C). As part of this qualification procedure, the Flash/EE memory is cycled to its specified endurance limit, described previously, before data retention is characterized. This means that the Flash/EE memory is guaranteed to retain its data for its fully specified retention lifetime every time the Flash/EE memory is reprogrammed. Also note that retention lifetime, based on an activation energy of 0.6 eV, derates with TJ as shown in Figure 38. 40 60 70 90 TJ JUNCTION TEMPERATURE (°C) 250 200 150 100 50 0 50 80 110 300 100 ADI SPECIFICATION 100 YEARS MIN. AT TJ = 55°C Figure 38. Flash/EE Memory Data Retention Using the Flash/EE Program Memory The 62 kByte Flash/EE program memory array is mapped into the lower 62 kBytes of the 64 kByte program space addressable by the parts, and is used to hold user code in typical applica- tions. The program Flash/EE memory array can be programmed in three ways: Serial Downloading (In-Circuit Programming) The parts facilitate code download via the standard UART serial port. The parts enter serial download mode after a reset or power cycle if the PSEN pin is pulled low through an external 1 kΩ resistor. Once in serial download mode, the user can download code to the full 62 kBytes of Flash/EE program memory while the device is in-circuit in its target application hardware. A PC serial download executable is provided as part of the ADuC841/ADuC842 QuickStart development system. The serial download protocol is detailed in MicroConverter Application Note uC004. Parallel Programming Parallel programming mode is fully compatible with conven- tional third party flash or EEPROM device programmers. In this mode, Ports P0, P1, and P2 operate as the external data and address bus interface, ALE operates as the write enable strobe, and Port P3 is used as a general configuration port, which configures the device for various program and erase operations during parallel programming. The high voltage (12 V) supply required for flash programming is generated using on-chip charge pumps to supply the high voltage program lines. The complete parallel programming specification is available on the MicroConverter home page at www.analog.com/microconverter. |
Nº de peça semelhante - ADuC841BS62-3 |
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Descrição semelhante - ADuC841BS62-3 |
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