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HUFA76639P3 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças HUFA76639P3
Descrição Electrónicos  50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
HUFA76639P3, HUFA76639S3S Rev. B
HUFA76639P3, HUFA76639S3S
50A, 100V, 0.027 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Features
• Ultra Low On-Resistance
-rDS(ON) = 0.026Ω, VGS = 10V
-rDS(ON) = 0.027Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
HUFA76639P3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76639S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUFA76639P3
TO-220AB
76639P
HUFA76639S3S
TO-263AB
76639S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76639S3ST.
HUFA76639P3, HUFA76639S3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±16
V
Drain Current
Continuous (TC = 25
oC, V
GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 25
oC, V
GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100
oC, V
GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100
oC, V
GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
50
51
35
34
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180
1.2
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTES:
1. TJ = 25
oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
January 2002


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