R1QDA7236AB datasheet(17/39 Pages) RENESAS

Nome de Peças	R1QDA7236AB

Descrição Electrónicos	72-Mbit DDRII SRAM 2-word Burst

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R1QBA72 / R1QEA72 Series

Rev. 0.11 : 2013.01.15

PAGE:17

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Notes

Input voltage on any ball

V

IN

−0.5 to V

DD + 0.5

(2.5 V max.)

V1, 4

Input/output voltage

V

I/O

−0.5 to V

DDQ + 0.5

(2.5 V max.)

V1, 4

Core supply voltage

V

DD

−0.5 to 2.5

V

1, 4

Output supply voltage

V

DDQ

−0.5 to V

DD

V1, 4

Junction temperature

Tj

+125 (max)

°C5

Storage temperature

T

STG

−55 to +125

°C

Notes:

1.

All voltage is referenced to V

SS.

2.

Permanent device damage may occur if Absolute Maximum Ratings are exceeded.

Functional operation should be restricted the Operation Conditions. Exposure to higher than

recommended voltages for extended periods of time could affect device reliability.

3.

These CMOS memory circuits have been designed to meet the DC and AC specifications

shown in the tables after thermal equilibrium has been established.

4.

The following supply voltage application sequence is recommended: V

SS, VDD, VDDQ, VREF

then V

IN. Remember, according to the Absolute Maximum Ratings table, VDDQ is not to

exceed 2.5 V, whatever the instantaneous value of V

DDQ.

5.

Some method of cooling or airflow should be considered in the system. (Especially for high

frequency or ODT parts)

Common

Recommended DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Notes

Power supply voltage -- core

V

DD

1.7

1.8

1.9

V

1

Power supply voltage -- I/O

V

DDQ

1.4

1.5

V

DD

V1, 2

Input reference voltage -- I/O

V

REF

0.68

0.75

0.95

V

3

Input high voltage

V

IH (DC)

V

REF + 0.1

⎯

V

DDQ + 0.3

V

1, 4, 5

Input low voltage

V

IL (DC)

−0.3

⎯

V

REF − 0.1

V

1, 4, 5

Notes:

1. At power-up, V

DD and VDDQ are assumed to be a linear ramp from 0V to VDD(min.) or

V

DDQ(min.) within 200ms. During this time VDDQ < VDD and VIH < VDDQ.

During normal operation, V

DDQ must not exceed VDD.

2. Please pay attention to Tj not to exceed the temperature shown in the absolute maximum

ratings table due to current from V

DDQ.

3. Peak to peak AC component superimposed on V

REF may not exceed 5% of VREF.

4. These are DC test criteria. The AC V

IH / VIL levels are defined separately to measure timing

parameters.

5. Overshoot: V

IH (AC) ≤ VDDQ + 0.5 V for t ≤ tKHKH/2

Undershoot: V

IL (AC) ≥−0.5 V for t ≤ tKHKH/2

During normal operation, V

IH(DC) must not exceed VDDQ and VIL(DC) must not be lower than VSS.

R10DS0170EJ0011

Nº de peça semelhante - R1QDA7236AB

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	R1QDA7236AB	827Kb / 36P	72-Mbit QDR SRAM 2-word Burst
	R1QDA7236AB	828Kb / 36P	72-Mbit QDR II SRAM 4-word Burst
	R1QDA7236AB	844Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1QDA7236AB	841Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1QDA7236AB	881Kb / 39P	72-Mbit QDR II SRAM 4-word Burst

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Descrição semelhante - R1QDA7236AB

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Renesas Technology Corp	R1Q4A7236ABB	844Kb / 36P	72-Mbit DDRII SRAM 2-word Burst
	R1QBA7236ABB	895Kb / 39P	72-Mbit DDRII SRAM 2-word Burst
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	R1QBA7236ABG	892Kb / 39P	72-Mbit DDRII SRAM 2-word Burst
	R1QHA7236ABB	893Kb / 39P	72-Mbit DDRII SRAM 2-word Burst
	R1QHA7236ABG	892Kb / 39P	72-Mbit DDRII SRAM 2-word Burst 2013.01.15
	R1Q6A7236ABG	841Kb / 36P	72-Mbit DDRII SRAM 2-word Burst

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