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IRLWI530A Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças IRLWI530A
Descrição Electrónicos  Advanced Power MOSFET
Download  9 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRLWI530A Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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IRLW/I530A
BV
DSS = 100 V
R
DS(on) = 0.12Ω
I
D = 14 A
100
14
9.9
49
±20
261
14
6.2
6.5
3.8
62
0.41
- 55 to +175
300
2.41
40
62.5
--
--
--
1
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ V
DS = 100V
♦ Lower R
DS(ON): 0. 101Ω (Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC
RθJA
RθJA
°C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
Symbol
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
ID
TJ , TSTG
TL
A
V
mJ
A
mJ
V/ns
W
W
W/
°C
A
°C
VDSS
V
*
©1999 Fairchild Semiconductor Corporation
Rev. B


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