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PD166105GS-E2-AY Folha de dados(PDF) 6 Page - Renesas Technology Corp

Nome de Peças PD166105GS-E2-AY
Descrição Electrónicos  MOS INTEGRATED CIRCUIT
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
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PD166105GS-E2-AY Folha de dados(HTML) 6 Page - Renesas Technology Corp

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PD166105GS
R07DS0604EJ0100 Rev.1.00
Page 6 of 15
Jan 19, 2012
Outline of Functions
Input Circuit (On/Off Control)
Output MOS turns on when the high-level input voltage (3.0 V or more) is applied to IN terminal.
Output MOS turns off when the low-level input voltage (1.5 V or less) is applied to IN terminal.
GND
5 V
VIN
VOUT
(Resistance load)
VOUT
GND
"L"
"H"
"H"
"H"
ON
ON
"L"
"L"
"L"
OFF
OFF
OFF
OFF
ON
Dynamic Clamp Circuit
This circuit is for protection of output and other circuits from the overvoltage by back electromotive force when
inductive load turns off. The clamp diode is connected between drain and gate of output. Output voltage is clamped by
this circuit when the voltage of the OUT terminal exceeded the output clamping voltage.
VZ
VIN
VOUT
(Inductive load)
5 V
GND
GND
VOUT
"H"
ON
"L"
"L"
OFF
OFF
Current Limitation Circuit
This circuit prevents destruction from the overcurrent when the short-circuit occurs. When the overcurrent flows to the
OUT terminal such as short-circuit condition, the output current is limited.
Power supply voltage to OUT terminal should be 18 V or less when the short-circuit occurs.
Overtemperature Protection Circuit
This circuit prevents destruction from overtemperature. The channel temperature of the output is monitored and the
output is shut down when overtemperature is detected. Output restarts automatically after the channel cooled down.
5 V
VIN
GND
VCC
"H"
"L"
"L"
OFF
OFF
OFF
ON
ON
Tch
VOUT
GND
THI


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