BCP53-16T1G datasheet(1/5 Pages) ONSEMI

Nome de Peças	BCP53-16T1G

Descrição Electrónicos	PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

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September, 2013 − Rev. 10

1

Publication Order Number:

BCP53T1/D

BCP53 Series

PNP Silicon

Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio

amplifier applications. The device is housed in the SOT−223 package

which is designed for medium power surface mount applications.

• High Current

• NPN Complement is BCP56

• The SOT−223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering,

eliminating the possibility of damage to the die

• Device Marking:

BCP53T1 = AH

BCP53−10T1 = AH−10

BCP53−16T1 = AH−16

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

−80

Vdc

Collector−Base Voltage

VCBO

−100

Vdc

Emitter−Base Voltage

VEBO

−5.0

Vdc

Collector Current

IC

1.5

Adc

Total Power Dissipation

@ TA = 25°C (Note 1)

Derate above 25

°C

PD

1.5

12

W

mW/

°C

Operating and Storage

Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

(Surface Mounted)

RqJA

83.3

°C/W

Lead Temperature for Soldering,

0.0625

″ from case

Time in Solder Bath

TL

260

10

°C

s

Device

Package

Shipping†

ORDERING INFORMATION

SOT−223

CASE 318E

STYLE 1

MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

MARKING DIAGRAM

BCP53T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

BCP53−16T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

BCP53−10T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

BCP53−16T3G

SOT−223

(Pb−Free)

4000/Tape & Reel

1

A

= Assembly Location

Y

= Year

W

= Work Week

XXXXX = Specific Device Code

G

= Pb−Free Package

AYW

XXXXX

G

(*Note: Microdot may be in either location)

SBCP53−16T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

SBCP53−10T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

SBCP53−10T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

2

4

3

Nº de peça semelhante - BCP53-16T1G

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	BCP53-16T1G	141Kb / 5P	PNP Silicon Epitaxial Transistors November, 2011 ??Rev. 8
	BCP53-16T1G	85Kb / 5P	PNP Silicon Epitaxial Transistors September, 2013 ??Rev. 10
	BCP53-16T1G	76Kb / 5P	PNP Silicon Epitaxial Transistors December, 2015 ??Rev. 12

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