MJE800 datasheet(1/4 Pages) FAIRCHILD

Nome de Peças	MJE800

Descrição Electrónicos	Monolithic Construction With Built-in Base- Emitter Resistors

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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Rev. A1, February 2001

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector- Base Voltage

: MJE800/801

: MJE802/803

60

80

V

VCEO

Collector-Emitter Voltage

: MJE800/801

: MJE802/803

60

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

4

A

IB

Base Current

0.1

A

PC

Collector Dissipation (TC=25°C)

40

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

: MJE800/801

: MJE802/803

IC = 50mA, IB = 0

60

80

V

ICEO

Collector Cut-off Current

: MJE800/801

: MJE802/803

VCE = 60V, IB = 0

VCE = 80V, IB = 0

100

µA

ICBO

Collector Cut-off Current

VCB = Rated BVCEO, IE = 0

TC = 100°C

100

500

µA

IEBO

Emitter Cut-off Current

VBE = 5V, IC = 0

2

mA

hFE

DC Current Gain

: MJE800/802

: MJE801/803

: ALL DEVICES

VCE = 3V, IC = 1.5A

VCE = 3V, IC = 2A

VCE = 3V, IC = 4A

750

100

VCE(sat)

Collector-Emitter Saturation Voltage

: MJE800/802

: MJE801/803

: ALL DEVICES

IC = 1.5A, IB = 30mA

IC = 2A, IB = 40mA

IC = 4A, IB = 40mA

2.5

2.8

3

V

VBE(on)

Base-Emitter ON Voltage

: MJE800/802

: MJE801/803

: ALL DEVICES

VCE = 3V, IC = 1.5A

VCE = 3V, IC = 2A

VCE = 3V, IC = 4A

2.5

3

V

MJE800/801/802/803

Monolithic Construction With Built-in Base-

Emitter Resistors

• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC

• Complement to MJE700/701/702/703

R110k

Ω

≅

R20.6k

Ω

≅

Equivalent Circuit

B

E

C

R1

R2

1

TO-126

1. Emitter

2.Collector

3.Base

Nº de peça semelhante - MJE800

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJE800	256Kb / 6P	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
ON Semiconductor	MJE800	256Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY 1995 REV 3
ON Semiconductor	MJE800	84Kb / 6P	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT February, 2006 ??Rev. 8
Savantic, Inc.	MJE800	103Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	MJE800	130Kb / 3P	Silicon NPN Power Transistors

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Descrição semelhante - MJE800

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