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N0801S-T1-AT Folha de dados(PDF) 1 Page - Renesas Technology Corp |
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N0801S-T1-AT Folha de dados(HTML) 1 Page - Renesas Technology Corp |
1 / 5 page R07DS0729EJ0100 Rev.1.00 Page 1 of 5 May 30, 2012 Data Sheet N0801S NPN SILICON EPITAXIAL TRANSISTOR FEATURES Complements to N0801R. V CEO = 80 V I C(DC) = 1.0 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number Packing Package Name Package Code Mass [TYP.] N0801S-T1-AT Tape 3000p/reel SOT-23F PVSF0003ZA-A 0.0126g ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC(DC) 1.0 A Collector Current (pulse) * 1 IC(pulse) 1.5 A Total Power Dissipation PT1 0.2 W Total Power Dissipation * 2 PT2 1.0 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to 150 C Note *1. PW 10 ms, Duty Cycle 50% *2. FR-4 board size 2500 mm 2 1.6 mm, t 5 sec ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Symbol Condition MIN. TYP. MAX. Unit Collector Cutoff Current ICBO VCB = 100 V, IE = 0 100 nA Emitter Cutoff Current IEBO VEB = 5.0 V, IC = 0 100 nA DC Current Gain hFE1* 1 VCE = 2.0 V, IC = 100 mA 90 160 400 DC Current Gain hFE2* 1 VCE = 2.0 V, IC = 500 mA 25 140 Collector Saturation Voltage VCE(sat)* 1 IC = 500 mA, IB = 50 mA 0.2 0.5 V Base Saturation Voltage VBE(sat)* 1 IC = 500 mA, IB = 50 mA 0.9 1.5 V Base to Emitter Voltage VBE* 1 VCE = 10.0 V, IC = 10 mA 600 640 700 mV Gain Bandwidth Product fT VCE = 5.0 V, IE = 10 mA 80 MHz Output Capacitance Cob VCE = 10.0 V, IE = 0, f = 1.0 MHz 10 pF Note *1. Pulsed hFE Classification Marking BW BV BU hFE1 90 to 180 135 to 270 200 to 400 R07DS0729EJ0100 Rev.1.00 May 30, 2012 |
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