LM3248TMXNOPB datasheet(5/31 Pages) TI1

Nome de Peças	LM3248TMXNOPB

Descrição Electrónicos	LM3248 2.7 MHz, 2.5A Adjustable Boost-Buck DC/DC Converter

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Fabricante Electrônico	TI1 [Texas Instruments]

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LM3248

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SNVSA01A – JULY 2013 – REVISED SEPTEMBER 2013

ELECTRICAL CHARACTERISTICS (BOOST)

Limits in standard typeface are for TA = 25°C. Limits in boldface type apply over the full operating ambient temperature range

(

−30°C ≤ TA ≤ +90°C). Unless otherwise noted, all specifications apply with VBATT = 3.0V and Buck in IDLE state.

Symbol

Parameter

Condition

Min

Typ

Max

Units

Open Loop (1), VCON = 1.44V,

ILIM-BOOST,PFET

PFET valley current limit

4.1

A

VOUT_BUCK = 3.6V

Boost internal oscillator

FOSC-Boost

2G/3G/4G mode, PWM mode, average

2.7

MHz

frequency

(1)

Current limit is built-in, fixed, and not adjustable.

SYSTEM CHARACTERISTICS (BOOST)

The following spec table entries are specified by design and verifications providing the component values in the Typical

Application Diagram are used: L = 1.0 µH (TOKO 1276AS-H-1R0N); CIN = 10 µF (Murata GRM155R61A106M); and COUT =

1µF (Taiyo Yuden LWK107B7105KA-T) + 10 µF (Murata GRM155R61A106M). These parameters are not verified by

production testing.

(1) (The Boost stage output voltage equation is given in (2).) Min and Max values are specified over the

ambient temperature range TA = −30°C ≤ TA ≤ 90°C. Unless otherwise noted, typical values are specified at VBATT = 3.0V,

Buck in IDLE, and TA = 25°C.

Symbol

Parameter

Condition

Min

Typ

Max

Units

Boost Bypass mode

2.7

5.5

V

VCON = 1.60V , MODE = LOW (3G/4G),

4.45

VOUT_BOOST

Boost output voltage

Load = 100 mA (2)

VCON = 1.46V , MODE = HIGH (2G),

4.65

Load = 100 mA (2)

MODE = LOW; BOOST_GATE = HIGH;

mV

SW_BOOST = switching;

–50

0

37

VCON = (VBATT - VGOTOBOOST)/2.5

VGOTOBOOST

Boost turn-on threshold voltage

MODE = HIGH; BOOST_GATE = HIGH;

SW_BOOST = switching;

125

VCON = (VBATT - VGOTOBOOST)/2.5

Minimum time from ENABLE =

TENABLE to

Initially in Idle State: Boost in 0% duty cycle

HIGH (and remains steady) to

25

BOOST_GATE

(bypass)

BOOST_GATE rising edge

µs

TBOOST_GATE_Active

Minimum time to assert

BOOST_GATE signal must remain HIGH

BOOST_GATE signal before

45

during this interval

next TTI slot boundary

Max input current averaged

VBATT = 2.7V, VOUT_BOOST = 4.2V

IIN-BOOST-MAX

3.5

A

across a 2G burst (RMS)

PA active during GSM burst (2)

Duty CycleMAX-

PWM maximum duty cycle

IOUT-BOOST < 1 mA

70

%

BOOST

VBATT = 3.4V to 3.7V, ΔV = ±300 mV,

VLINE-TR

Line transient response

TR =TF = 10 µs, VOUT_BUCK = 3.7V,

150

RLOAD_BUCK = 4Ω, MODE = 3G/4G

(2)

mVpp

VBATT = 2.7V, IOUT_BUCK = 10 mA to 850

mA,

VLOAD-TR

Load transient response

600

IOUT, TR = TF = 10 µs

VOUT_BUCK = 3.7V, MODE = 3G/4G

(2)

VBATT = 2.7V, VBOOST = 3.4V, IOUT = 2A,

Boost ripple voltage at worst-

VBOOST-RIPPLE

2G mode (Sufficient overhead between

100

mVpp

case conditions

VBOOST and VOUT )

(1)

Parameter is specified by design, characterization testing, or statistical analysis. Typical numbers are not verified by production testing,

but do represent the most likely norm.

(2)

VOUT-BOOST = VCON * 2.5 + [≈ 450 mV(3G/4G) or ≈ 950 mV(2G)].

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