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PZU3.6DB2DG Folha de dados(PDF) 4 Page - NXP Semiconductors |
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PZU3.6DB2DG Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 12 page PZUXDB2_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 31 March 2008 4 of 12 NXP Semiconductors PZUxDB2 series Dual Zener diodes 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering points at pin 4 and pin 5. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 500 K/W [2] - - 455 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 200 K/W Table 7. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage [1] IF = 10 mA - - 0.9 V IF = 100 mA - - 1.1 V Table 8. Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG Tj =25 °C unless otherwise specified. PZUxDB2 PZUxDB2/DG Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =5mA IZ = 0.5 mA IZ =5mA IZ =5mA Min Max Max Max Max VR (V) Typ Max Max 2.7 2.65 2.9 1000 100 20 1 −2.0 440 8 3.0 2.95 3.2 1000 95 10 1 −2.1 425 8 3.3 3.25 3.5 1000 95 5 1 −2.4 410 8 3.6 3.55 3.8 1000 90 5 1 −2.4 390 8 3.9 3.87 4.1 1000 90 3 1 −2.5 370 8 4.3 4.15 4.34 1000 90 3 1 −2.5 350 8 4.7 4.55 4.75 800 80 2 1 −1.4 325 8 5.1 4.98 5.2 250 60 2 1.5 0.3 300 5.5 5.6 5.49 5.73 100 40 1 2.5 1.9 275 5.5 6.2 6.06 6.33 80 30 0.5 3 2.7 250 5.5 6.8 6.65 6.93 60 20 0.5 3.5 3.4 215 5.5 7.5 7.28 7.6 60 10 0.5 4 4.0 170 3.5 |
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