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BC546 Folha de dados(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BC546 Folha de dados(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 3 page Symbol Units at VCB=30V at VEB=5V V(BR)EBO V Version:A13 BC547, BC550 BC548, BC549 at IE=100uA Emitter Base Breakdown Voltage Characteristics at TA=25℃ Current Gain Group A B C Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage BC546 BC547, BC550 BC548, BC549 BC546 at IC=100μA 50 - - V(BR)CBO 80 nA V -- - - -- 15 100 6- - Emitter Base Cutoff Current IEBO at IC=1 mA 45 - 30 V 30 - - -- V(BR)CEO 65 - nA - 800 V at VCE= 5 V, IC= 2 mA 200 - 220 - - Collector Base Cutoff Current ICBO DC Current Gain hFE 110 - Small Signal Product 450 420 Parameter Min. Typ. Max. 0 20 40 60 80 100 04 8 12 16 20 VCE(V), Collector Emitter Voltage FIG.1 Static Characteristic IE=400uA IE=350uA IE=300uA IE=250uA IE=200uA IE=150uA IE=100uA IE=50uA 0 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE(V), Base Emitter Voltage FIG. 2 Transfer Characteristic VCE=5V 10 100 1000 1 10 100 1000 Ic(mA), Collector Current VCE=5V FIG. 3 DC Current Gain 10 100 1000 10000 1 10 100 1000 Ic(mA), Collector Current IC=10IB VBE(sat) VCE(sat) FIG. 4 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage |
Nº de peça semelhante - BC546 |
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Descrição semelhante - BC546 |
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