1

TP62601

MOTOROLA RF DEVICE DATA

The RF Line

Microwave Power

Oscillator Transistor

. . . designed for use as power oscillators at frequencies to 3.0 GHz with typical

output power of over 1.0 watt.

• Operation to 3.0 GHz

• High Output Power (1.2 W Typ @ 2.5 GHz)

• Rugged — Capable of Withstanding High Load VSWR

• High Reliability

• Hermetic Package

• Gold Metallization

• Diffused Emitter Ballast Resistors

• Common Collector Configuration

• Formerly named TRW62601

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

22

Vdc

Collector–Base Voltage

VCBO

45

Vdc

Emitter–Base Voltage

VEBO

3.5

Vdc

Collector Current — Continuous

IC

0.5

Adc

Operating Junction Temperature

TJ

200

°C

Storage Temperature Range

Tstg

– 65 to + 200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

15

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)

V(BR)CEO

22

—

—

Vdc

Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0)

V(BR)CBO

45

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0)

V(BR)EBO

3.5

—

—

Vdc

Collector–Emitter Breakdown Voltage (IC = 20 mA, RBE = 10 Ω)

V(BR)CER

50

—

—

Vdc

Collector Cutoff Current (VCB = 28 V, IE = 0)

ICBO

—

—

0.125

mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 100 mA, VCE = 5.0 V)

hFE

20

—

120

—

(continued)

Order this document

by TP62601/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TP62601

MICROWAVE

POWER

OSCILLATOR

TRANSISTOR

CASE 328A–03, STYLE 3

(GP–13)

REV 6