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2N2326A Folha de dados(PDF) 1 Page - Digitron Semiconductors

Nome de Peças 2N2326A
Descrição Electrónicos  SILICON CONTROLLED RECTIFIERS
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Fabricante Electrônico  DIGITRON [Digitron Semiconductors]
Página de início  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N2326A Folha de dados(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N2322(A)-2N2328(A), 2N2329
SILICON CONTROLLED RECTIFIERS
1.6 AMP, PLANAR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Symbol
2N2322
2N2322A
2N2323
2N2323A
2N2324
2N2324A
2N2325
2N2325A
2N2326
2N2326A
2N2327
2N2327A
2N2328
2N2328A
2N2329
Units
Peak repetitive forward voltage
VDRM
25
50
100
150
200
250
300
400
V
Peak repetitive reverse voltage
VRRM
25
50
100
150
200
250
300
400
V
Non-repetitive peak reverse voltage
VRSM
40
75
150
225
300
350
400
500
V
DC on-state current
80°C ambient
85°C case
IT(AV)
300
1.6
mA
A
One cycle surge on-state current
ITSM
15
A
Repetitive peak on-state current
ITM
30
A
Gate power dissipation
PGM
0.1
W
Gate power dissipation
PGM(AV)
0.01
W
Peak gate current
IGM
100
mA
Reverse gate voltage
VGR
6
V
Reverse gate current
IGR
3
mA
Operating temperature
Top
-65 to +125
°C
Storage junction temperature
Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS @ 25°C
Characteristics
Symbol
Min
Typ
Max
Unit
Test Condition
Off-state current
IDRM
-
0.1
10
µA
VDRM = rating, RGK = 1K (2K for “A” types)
Reverse current
IRRM
-
0.1
10
µA
VRRM = rating, RGK = 1K (2K for “A” types)
Gate trigger current
“A” types
Non “A” types
IGT
-
-
2
50
20
200
µA
VD = 6V, RL = 100Ω
Gate trigger voltage
“A” types
Non “A” types
VGT
0.35
0.35
0.52
0.55
0.60
0.80
V
VD = 6V, RGK = 2K, RL = 100Ω
VD = 6V, RGK = 1K, RL = 100Ω
On-state voltage
VTM
-
2.0
2.2
V
ITM = 4A (pulse test)
Holding current
IH
-
0.3
2.0
mA
VD = 6V, RGK = 1K (2K for “A” types)
Reverse gate current
IGR
-
1
200
µA
VGR = 6V
Delay time
td
-
0.6
-
µs
IG = 10mA, IT = 1A, VD = 30V
Rise time
tr
-
0.4
-
µs
IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn off time
tq
-
20
-
µs
IT = 1A, IR = 1A, RGK = 1K
ELECTRICAL CHARACTERISTICS @ 125°C
Characteristics
Symbol
Min
Typ
Max
Unit
Test Condition
Off-state current
IDRM
-
1
100
µA
VDRM = rating, RGK = 1K (2K for “A” types)
Reverse current
IRRM
-
1
100
µA
VRRM = rating, RGK = 1K (2K for “A” types)
Gate trigger voltage
VGT
0.1
0.3
-
V
VD = rated VD, RGK = 1K (2K for “A” types)
Holding current
“A” types
Non “A” types
IH
0.1
0.15
-
-
-
-
mA
VD = 6V, RGK = 2K
VD = 6V, RGK = 1K
Off-state voltage – critical rate of rise
“A” types
Non “A” types
dv/dt
0.7
1.8
-
-
-
-
V/µs
VDRM = rating, RGK = 2K
VDRM = rating, RGK = 1K
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116


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