FQD11P06 datasheet(3/9 Pages) FAIRCHILD

Nome de Peças	FQD11P06

Descrição Electrónicos	P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

Página de início	http://www.fairchildsemi.com

Logo

3 / 9 page

www.fairchildsemi.com

3

Typical Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10

-1

10

0

10

1

150℃

※

Notes :

1. V

GS = 0V

2. 250µs Pulse Test

25℃

-V

SD , Source-Drain Voltage [V]

0

1

20

0

3

0

4

50

0.0

0.2

0.4

0.6

0.8

※

Note : T

J = 25℃

V

GS = - 20V

V

GS = - 10V

-I

D , Drain Current [A]

2

68

4

10

-1

10

0

10

1

150℃

25℃

-55℃

※

Notes :

1. V

DS = -30V

2. 250µs Pulse Test

-V

GS , Gate-Source Voltage [V]

10

-1

0

10

1

10

-1

10

0

10

1

V

GS

Top :

- 15.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom : - 4.5 V

※

Notes :

1. 250µs Pulse Test

2. T

C = 25℃

10

-V

DS, Drain-Source Voltage [V]

0

2

4

6

8

10

12

14

0

2

4

6

8

10

12

V

DS = -30V

V

DS = -48V

※

Note : I

D = -11.4 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※

Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

-V

DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

FQD11P06 / FQU11P06 Rev. C2

Nº de peça semelhante - FQD11P06

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	FQD11P06	615Kb / 9P	60V P-Channel MOSFET
Inchange Semiconductor ...	FQD11P06	353Kb / 2P	isc P-Channel MOSFET Transistor
VBsemi Electronics Co.,...	FQD11P06TM	990Kb / 8P	P-Channel 60-V (D-S) MOSFET
BYCHIP ELECTRONICS CO.,...	FQD11P06TM	912Kb / 4P	P-channel Enhancement Mode Power MOSFET
Fairchild Semiconductor	FQD11P06	856Kb / 9P	60V P-Channel MOSFET

More results

Descrição semelhante - FQD11P06

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	FQB8P10TM	1Mb / 8P	P-Channel QFET짰 MOSFET -100 V, -8.0 A, 185 m廓
	FQB27P06TM	1Mb / 8P	P-Channel QFET짰 MOSFET -60 V, -27 A, 70 m廓
	FQPF47P06YDTU	1Mb / 9P	P-Channel QFET짰 MOSFET -60 V, -30 A, 26 m廓
	FQU17P06TU	1Mb / 9P	P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓
	FQD7P06TM	543Kb / 8P	P-Channel QFET짰 MOSFET - 60 V, - 5.4 A, 450 m?
	FQD20N06LTM	1Mb / 8P	N-Channel QFET짰 MOSFET 60 V, 17.2 A, 42 m廓
	FQB50N06LTM	836Kb / 8P	N-Channel QFET짰 MOSFET 60 V, 52.4 A, 21 m廓
	FQD13N06LTM	916Kb / 10P	N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓
	FQI50N06TU	1Mb / 9P	N-Channel QFET짰 MOSFET 60 V, 50 A, 22 m廓
	FQD13N06TM	803Kb / 8P	N-Channel QFET짰 MOSFET 60 V, 10 A, 140 m廓

More results

FQD11P06 Folha de dados(PDF) 3 Page - Fairchild Semiconductor

FQD11P06 Folha de dados(HTML) 3 Page - Fairchild Semiconductor

Nº de peça semelhante - FQD11P06

Descrição semelhante - FQD11P06

Html Pages

1 2 3 4 5 6 7 8 9

Folha de dados Download

Ligação URL