OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. —

1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747

FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue B

05/2011

Page 3 of 4

Plastic Infrared Emitting Diode

OP165, OP166 Series

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

Apertured Radiant Incidence

OP165A, OP166A

1.95

-

-

(2)

Radiant Power Output

OP165W, OP166W

0.50

-

-

mW

Forward Voltage

-

-

1.60

V

Reverse Current

-

-

100

µA

Wavelength at Peak Emission

-

935

-

nm

B

Spectral Bandwidth between Half Power

Points

-

50

-

nm

Spectral Shift with Temperature

OP165, OP166 (A, B, C, D)

OP165W, OP166W

-

-

-

±0.30

-

-

Emission Angle at Half Power Points

OP165, OP166 (A, B, C, D)

OP165W, OP166W

-

-

18

90

-

-

Output Rise Time

-

1000

-

ns

Output Fall Time

-

500

-

ns

Storage and Operating Temperature Range

Reverse Voltage

2.0 V

Continuous Forward Current

50 mA

Peak Forward Current (1 µs pulse width, 300 pps)

3.0 A

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

260° C

Power Dissipation

Notes:

1. Derate linearly 1.33 mW/°C above 25°C

ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to

and centered on the mechanical axis of the lens, and 0.590” (14.99

uniform within the measured areas.