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MTB02N03J3 Folha de dados(PDF) 2 Page - Cystech Electonics Corp.

Nome de Peças MTB02N03J3
Descrição Electrónicos  N-Channel Enhancement Mode Power MOSFET
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Fabricante Electrônico  CYSTEKEC [Cystech Electonics Corp.]
Página de início  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB02N03J3 Folha de dados(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C575J3
Issued Date : 2012.01.03
Revised Date : 2013.12.26
Page No. : 2/ 9
MTB02N03J3
CYStek Product Specification
Absolute Maximum Ratings (TC=25
°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TC=25
°C
136
Continuous Drain Current @ TC=100
°C
ID
86
Pulsed Drain Current
(Note 1)
IDM
300
Avalanche Current
IAS
60
A
Avalanche Energy @ L=0.3mH, ID=60A, RG=25Ω
EAS
540
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
EAR
9
mJ
Total Power Dissipation @ TC=25℃
93
Total Power Dissipation @ TC=100℃
Pd
37
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
1.35
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 (Note)
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
110
°C/W
Note : When mounted on the minimum pad size recommended (PCB mount).
Characteristics (TC=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
30
-
-
V
VGS=0V, ID=250μA
VGS(th)
1
1.6
2.5
V
VDS = VGS, ID=250μA
IGSS
-
-
±
100
nA
VGS=±20, VDS=0V
-
-
1
VDS =30V, VGS =0V
IDSS
-
-
25
μA
VDS =30V, VGS =0V, Tj=125
°C
-
2.7
3
VGS =10V, ID=45A
*RDS(ON)
-
3.8
6
VGS =4.5V, ID=36A
*GFS
-
17
-
S
VDS =10V, ID=45A
Dynamic
*Qg
-
108
-
*Qgs
-
31
-
*Qgd
-
43
-
nC
ID=45A, VDS=15V, VGS=10V
*td(ON)
-
72
-
*tr
-
82
-
*td(OFF)
-
172
-
*tf
-
71
-
ns
VDS=15V, ID=1A, VGS=10V,
RGS=6Ω, RL=15Ω


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