MTB12N03J3 datasheet(2/9 Pages) CYSTEKEC

Nome de Peças	MTB12N03J3

Descrição Electrónicos	N-Channel Logic Level Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C730J3

Issued Date : 2011.03.04

Revised Date : 2013.12.26

Page No. : 2/9

MTB12N03J3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current @ TC=25

°C

40

Continuous Drain Current @ TC=100

°C

ID

25

Pulsed Drain Current

IDM

120 *1

Avalanche Current

IAS

30

A

Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω

EAS

45

Repetitive Avalanche Energy @ L=0.05mH

EAR

4.5 *2

mJ

TC=25℃

35

Total Power Dissipation

TC=100℃

PD

14

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

3.5

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

50 *3

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

110

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. When mounted on the minimum pad size recommended (PCB mount).

Characteristics (TC=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

30

-

V

VGS=0, ID=250μA

VGS(th)

1

1.7

3

V

VDS = VGS, ID=250μA

GFS *1

-

14

-

S

VDS =5V, ID=15A

IGSS

-

±

100

nA

VGS=±20

-

1

VDS =24V, VGS =0

IDSS

-

25

μA

VDS =24V, VGS =0, TJ=125

°C

-

8.5

11.5

mΩ

VGS =10V, ID=15A

RDS(ON) *1

-

13.5

20

mΩ

VGS =4.5V, ID=10A

Dynamic

Ciss

-

1195

-

Coss

-

123

-

Crss

-

101

-

pF

VGS=0V, VDS=15V, f=1MHz

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