IRF3711SPBF datasheet(1/12 Pages) IRF

Nome de Peças	IRF3711SPBF

Descrição Electrónicos	High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-to-Source Voltage

± 20

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

110

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

69

A

IDM

Pulsed Drain Current

440

PD @TC = 25°C

Maximum Power Dissipation

120

W

PD @TA = 25°C

Maximum Power Dissipation

3.1

W

Linear Derating Factor

0.96W/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

www.irf.com

1

2/27/04

IRF3711PbF

IRF3711SPbF

IRF3711LPbF

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on) max

ID

20V

6.0m

Ω

110A

Notes

through are on page 11

Absolute Maximum Ratings

D2Pak

IRF3711SPbF

TO-220AB

IRF3711PbF

TO-262

IRF3711LPbF

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.04

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

RθJA

Junction-to-Ambient (PCB mount)

–––

40

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V VGS

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

PD- 94948

l Lead-Free

Nº de peça semelhante - IRF3711SPBF

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International Rectifier	IRF3711SPBF	291Kb / 12P	HEXFET Power MOSFET

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