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2SC5014 Folha de dados(PDF) 2 Page - NEC |
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2SC5014 Folha de dados(HTML) 2 Page - NEC |
2 / 8 page 2SC5014 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 0.1 µAVCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µAVEB = 1 V, IC = 0 DC Current Gain hFE 75 150 VCE = 3 V, IC = 5 mA*1 Gain Bandwidth Product fT 12 GHz VCE = 3 V, IC = 5 mA Feed-back Capacitance Cre 0.2 0.4 pF VCB = 3 V, IE = 0, f = 1 MHz*2 Insertion Power Gain |S21e|2 911 dB VCE = 3 V, IC = 5 mA,f = 2.0 GHz Noise Figure NF 2.5 4.0 dB VCE = 3 V, IC = 3 mA,f = 2.0 GHz *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank KB Marking T82 hFE 75 to 150 |
Nº de peça semelhante - 2SC5014 |
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Descrição semelhante - 2SC5014 |
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