2SC5177 datasheet(3/12 Pages) NEC

Nome de Peças	2SC5177

Descrição Electrónicos	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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2SC5177

3

CHARACTERISTICS CURVES (TA = 25

°C)

TA – Ambient Temperature – °C

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

VCE – Collector to Emitter Voltage – V

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

VBE – Base to Emitter Voltage – V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

200

0

50

100

150

50

40

30

20

10

0

0.5

1.0

25

20

15

10

5

0

1.0

2.0

3.0

A

µ

200

A

µ

180

A

µ

160

A

µ

140

A

µ

120

A

µ

100

A

µ

80

A

µ

60

A

µ

40

A

µ

20

IB =

VCE = 2 V

30 mW

IC – Collector Current – mA

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

VCB – Collector Current – V

INSERTION POWER GAIN vs.

COLLECTOR CURRENT

f = 2 GHz

18

16

14

12

10

8

6

4

1

2

5

10

VCE = 1 V

2 V

f = 2 GHz

14

12

10

8

6

4

1

2

5

10

VCE = 1 V

2 V

IC – Collector Current – mA

DC CURRENT GAIN vs.

COLLECTOR CURRENT

500

200

100

10

20

50

1

2

5

10

20

50

100

VCE = 1 V

VCE = 2 V

Nº de peça semelhante - 2SC5177

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	2SC5177	187Kb / 14P	SILICON TRANSISTOR 1994

More results

Descrição semelhante - 2SC5177

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NEC	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5179	57Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5182	56Kb / 12P	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5186	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5178	82Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION

More results

2SC5177 Folha de dados(PDF) 3 Page - NEC

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Descrição semelhante - 2SC5177

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