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FQD17N08L Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FQD17N08L Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Package Marking and Ordering Information www.fairchildsemi.com 2 Part Number Top Mark Package Reel Size Tape Width Quantity FQD17N08L FQD17N08LTM DPAK 330 mm 16 mm 2500 units Packing Method Tape and Reel Electrical Characteristics TC = 25°C unless otherwise noted. ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 (Note 4) (Note 4) Symbol Parameter Test Conditions Min . Typ . Max . Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 µA VDS = 64 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.45 A VGS = 5 V, ID = 6.45 A -- 0.076 0.090 0.100 0.115 Ω gFS Forward Transconductance VDS = 25 V, ID = 6.45 A -- 11.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 400 520 pF Coss Output Capacitance -- 120 155 pF Crss Reverse Transfer Capacitance -- 29 37 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 40 V, ID = 16.5 A, RG = 25 Ω -- 7 25 ns tr Turn-On Rise Time -- 290 590 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 75 160 ns Qg Total Gate Charge VDS = 64 V, ID = 16.5 A, VGS = 5 V -- 8.8 11.5 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 5.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12.9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 51.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.9 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 16.5 A, dIF / dt = 100 A/µs -- 55 -- ns Qrr Reverse Recovery Charge -- 85 -- nC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.83 mH, IAS = 12.9 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 16.5 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. |
Nº de peça semelhante - FQD17N08L |
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Descrição semelhante - FQD17N08L |
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