Document No. E0140N30 (Ver. 3.0)

Date Published June 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory,Inc. 2002

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

DATA SHEET

Direct Rambus DRAM SO-RIMM

MC-4R64FKE8S (32M words

×××× 18 bits)

Description

The Direct Rambus SO-RIMM module is a general-

purpose high-performance memory module subsystem

suitable for use in a broad range of applications

including

computer

memory,

mobile

personal

computers, networking systems, and other applications

where high bandwidth and low latency are required.

MC-4R64FKE8S modules consists of two 288M Direct

Rambus

DRAM

(Direct

RDRAM)

devices

(

µPD488588). These are extremely high-speed CMOS

DRAMs organized as 16M words by 18 bits. The use

of Rambus Signaling Level (RSL) technology permits

800MHz transfer rates while using conventional system

and board design technologies.

Direct RDRAM devices are capable of sustained data

transfers at 1.25ns per two bytes (10ns per 16 bytes).

The architecture of the Direct RDRAM enables the

highest sustained bandwidth for multiple, simultaneous,

randomly addressed

memory transactions.

The

separate control and data buses with independent row

and column control yield high bus efficiency.

The

Direct RDRAM's multi-bank architecture supports up to

four simultaneous transactions per device.

Features

• 160 edge connector pads with 0.65mm pad spacing

• 64MB Direct RDRAM storage

module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher

efficiency