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BAT74235 Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BAT74235
Descrição Electrónicos  Schottky barrier double diode
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
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BAT74235 Folha de dados(HTML) 2 Page - NXP Semiconductors

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BAT74_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 19 April 2010
2 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
3.
Ordering information
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Series connection.
[2]
If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one
diode is in reverse operation and the other is in forward operation at the same moment, total device current
is max. 200 mA.
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BAT74
-
plastic surface-mounted package; 4 leads
SOT143B
Table 4.
Marking codes
Type number
Marking code[1]
BAT74
*L4
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
-
30
V
IF
forward current
-
200
mA
IFRM
repetitive peak forward
current
tp ≤ 1s; δ≤ 0.5
-
300
mA
IFSM
non-repetitive peak forward
current
tp <10ms
-
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C-
230
mW
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
−65
+125
°C
Tstg
storage temperature
−65
+150
°C
Double diode operation
VR
reverse voltage
-
30
V
[1] -60
V
IF
forward current
[2] -110
mA
IFRM
repetitive peak forward
current
tp ≤ 1s; δ≤ 0.5
-
200
mA


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