FQD7P06TM datasheet(2/8 Pages) FAIRCHILD

Nome de Peças	FQD7P06TM

Descrição Electrónicos	P-Channel QFET짰 MOSFET - 60 V, - 5.4 A, 450 m?

Download	8 Pages

Scroll/Zoom	100%

Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

Página de início	http://www.fairchildsemi.com

Logo

2 / 8 page

FQD7P06 Rev. C0

www.fairchildsemi.com

2

Elerical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 3.6mH, IAS = -5.4A, VDD = -25V, RG = 25 Starting TJ = 25°C

3. ISD ≤ -7.0A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit



Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 A

-60

--

V

BVDSS

/

TJ

Breakdown Voltage Temperature

Coefficient

ID = -250 A, Referenced to 25°C

--

-0.07

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = -60 V, VGS = 0 V

--

-1

A

VDS = -48 V, TC = 125°C

--

-10

A

IGSSF

Gate-Body Leakage Current, Forward

VGS = -25 V, VDS = 0 V

--

-100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = 25 V, VDS = 0 V

--

100

nA



On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250 A

-2.0

--

-4.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = -10 V, ID = -2.7 A

--

0.36

0.451



gFS

Forward Transconductance

VDS = -30 V, ID = -2.7 A

--

3.8

--

S



Dynamic Characteristics

Ciss

Input Capacitance

VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

--

225

295

pF

Coss

Output Capacitance

--

110

145

pF

Crss

Reverse Transfer Capacitance

--

25

32

pF



Switching Characteristics

td(on)

Turn-On Delay Time

VDD = -30 V, ID = -3.5 A,

RG = 25 

--

7

25

ns

tr

Turn-On Rise Time

--

50

110

ns

td(off)

Turn-Off Delay Time

--

7.5

25

ns

tf

Turn-Off Fall Time

--

25

60

ns

Qg

Total Gate Charge

VDS = -48 V, ID = -7.0 A,

VGS = -10 V

--

6.3

8.2

nC

Qgs

Gate-Source Charge

--

1.6

--

nC

Qgd

Gate-Drain Charge

--

3.1

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

-5.4

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

-21.6

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = -5.4 A

--

-4.0

V

trr

Reverse Recovery Time

VGS = 0 V, IS = -7.0 A,

dIF / dt = 100 A/s

--

77

--

ns

Qrr

Reverse Recovery Charge

--

0.23

--

C

(Note 4)

Nº de peça semelhante - FQD7P06TM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	FQD7P06TF	543Kb / 8P	P-Channel QFET MOSFET - 60 V, - 5.4 A, 450 m

More results

Descrição semelhante - FQD7P06TM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	FQD7P06TF	543Kb / 8P	P-Channel QFET MOSFET - 60 V, - 5.4 A, 450 m
	FQB27P06TM	1Mb / 8P	P-Channel QFET짰 MOSFET -60 V, -27 A, 70 m廓
	FQPF47P06YDTU	1Mb / 9P	P-Channel QFET짰 MOSFET -60 V, -30 A, 26 m廓
	FQD11P06TM	1Mb / 9P	P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓
	FQU17P06TU	1Mb / 9P	P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓
	FQB5N90TM	785Kb / 8P	N-Channel QFET짰 MOSFET 900 V, 5.4 A, 2.3 廓
	FQD20N06LTM	1Mb / 8P	N-Channel QFET짰 MOSFET 60 V, 17.2 A, 42 m廓
	FQI50N06TU	1Mb / 9P	N-Channel QFET짰 MOSFET 60 V, 50 A, 22 m廓
	FQD13N06TM	803Kb / 8P	N-Channel QFET짰 MOSFET 60 V, 10 A, 140 m廓
	FQT13N06LTF	760Kb / 8P	N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓

More results

FQD7P06TM Folha de dados(PDF) 2 Page - Fairchild Semiconductor

FQD7P06TM Folha de dados(HTML) 2 Page - Fairchild Semiconductor

Nº de peça semelhante - FQD7P06TM

Descrição semelhante - FQD7P06TM

Html Pages

1 2 3 4 5 6 7 8

Folha de dados Download

Ligação URL