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ES1D Folha de dados(PDF) 1 Page - General Semiconductor |
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ES1D Folha de dados(HTML) 1 Page - General Semiconductor |
1 / 2 page 4/98 ES1A THRU ES1D SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package ♦ Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diodes ♦ Ultrafast recovery times for high efficiency ♦ Low forward voltage ♦ Low leakage current ♦ Glass passivated chip junction ♦ High temperature soldering guaranteed: 250°C/10 seconds on terminals MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.002 ounces, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS ES1A ES1B ES1C ES1D UNITS Device marking code EA EB EC ED Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts Maximum RMS voltage VRMS 35 70 105 140 Volts Maximum DC blocking voltage VDC 50 100 150 200 Volts Maximum average forward rectified current at TL=120°C I(AV) 1.0 Amp Peak forward surge current 8.3ms single half sine-wave superimposed on IFSM 30.0 Amps rated load (JEDEC Method) Maximum instantaneous forward voltage at 0.6A 0.865 at 1.0A VF 0.920 Volts Maximum DC reverse current TA=25°C 5.0 at rated DC blocking voltage TA=100°C IR 100 µA Maximum reverse recovery time (NOTE 1) trr 15.0 ns Maximum reverse recovery time TA=25°C 25.0 (NOTE 2) TA=100°C trr 35.0 ns Maximum stored charge TA=25°C 10.0 (NOTE 2) TA=100°C Qrr 25.0 nC Typical junction capacitance (NOTE 3) CJ 7.0 pF Maximum thermal resistance (NOTE 4) R ΘJA 85.0 °C/W R ΘJL 35.0 Operating and storage temperature range TJ, TSTG -55 to +150 °C NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/ µs, Irr =10% IRM for measurement of trr (3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts (4) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) MAX. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) DO-214AC Dimensions in inches and (millimeters) |
Nº de peça semelhante - ES1D |
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Descrição semelhante - ES1D |
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