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2SK1163 Folha de dados(PDF) 4 Page - Hitachi Semiconductor |
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2SK1163 Folha de dados(HTML) 4 Page - Hitachi Semiconductor |
4 / 6 page 2SK1163, 2SK1164 4 120 80 40 0 50 100 150 Case Temperature TC (°C) Power vs. Temperature Derating 50 5 1.0 0.05 10 100 1,000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 20 2 0.2 1 3 30 300 Ta = 25°C 10 µ s 100 µ s 1 ms PW = 10 ms (1 shot) DC Operation (T C = 25°C) 2SK1163 2SK1164 0.1 0.5 10 3 Pulse Width PW (s) 1.0 0.1 0.3 D = 1 10 µ 0.03 0.01 100 µ 10 m 100 m 1 10 1 m TC = 25°C 0.5 0.2 0.1 0.05 0.02 0.01 1 Shot Pulse T PW PDM D = T PW θch–c (t) = γ S (t) · θch–c θch–c = 1.25°C/W, T C = 25°C Normalized Transient Thermal Impedance vs. Pulse Width |
Nº de peça semelhante - 2SK1163 |
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Descrição semelhante - 2SK1163 |
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