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2SK1166 Folha de dados(PDF) 3 Page - Hitachi Semiconductor

Nome de Peças 2SK1166
Descrição Electrónicos  Silicon N-Channel MOS FET
Download  9 Pages
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Fabricante Electrônico  HITACHI [Hitachi Semiconductor]
Página de início  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1166 Folha de dados(HTML) 3 Page - Hitachi Semiconductor

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2SK1165, 2SK1166
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1165 V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1166
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1165 I
DSS
250
µAV
DS = 360 V, VGS = 0
drain current
2SK1166
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1165 R
DS(on)
0.40
0.55
I
D = 6 A, VGS = 10 V *
1
on state resistance
2SK1166
0.45
0.60
Forward transfer admittance
|yfs|
6.0
10
S
I
D = 6 A, VDS = 10 V *
1
Input capacitance
Ciss
1450
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
410
pF
f = 1 MHz
Reverse transfer capacitance
Crss
55
pF
Turn-on delay time
t
d(on)
20
ns
I
D = 6 A, VGS = 10 V,
Rise time
t
r
70
ns
R
L = 5 Ω
Turn-off delay time
t
d(off)
120
ns
Fall time
t
f
—60
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
F = 12 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
450
ns
I
F = 12 A, VGS = 0,
di
F/dt = 100 A/µs
Note:
1. Pulse test


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