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©

1999

MOS INTEGRATED CIRCUIT

MC-4R128CEE6B, 4R128CEE6C

Direct Rambus

128M-BYTE (64M-WORD x 16-BIT)

PRELIMINARY DATA SHEET

Document No. M14539EJ1V1DS00 (1st edition)

Date Published November 1999 NS CP (K)

Printed in Japan

The mark 5

5

5

5 shows major revised points.

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for

use in a broad range of applications including computer memory, personal computers, workstations, and other

applications where high bandwidth and low latency are required.

MC-4R128CEE6B, 4R128CEE6C modules consists of eight 128M Direct Rambus DRAM (Direct RDRAM™)

devices (

µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use

of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using

conventional system and board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions

per device.

Features

• 184 edge connector pads with 1mm pad spacing

• 128 MB Direct RDRAM storage

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Low power and powerdown self refresh modes

• Separate Row and Column buses for higher efficiency