FJV4114R datasheet(2/5 Pages) FAIRCHILD

Nome de Peças	FJV4114R

Descrição Electrónicos	PNP Epitaxial Silicon Transistor with Bias Resistor

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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FJV4114R Rev. 1.1.2

2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

PD

Power Dissipation

200

mW

Derate Above TA = 25°C

1.60

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

625

°C/W

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVCBO

Collector-Base Breakdown Voltage

IC = -10 μA, IE = 0

-50

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = -100 μA, IB = 0

-50

V

ICBO

Collector Cut-Off Current

VCB = -40 V, IE = 0

-0.1

μA

hFE

DC Current Gain

VCE = -5 V, IC = -5 mA

68

VCE(sat)

Collector-Emitter Saturation Voltage

IC = -10 mA, IB = -0.5 mA

-0.3

V

fT

Current Gain Bandwidth Product

VCE = -10 V, IC =-5 mA

200

MHz

Cob

Output Capacitance

VCB = -10 V, IE = 0,

f = 1.0 MHz

5.5

pF

VI(off)

Input-Off Voltage

VCE = -5 V, IC = -100 μA-0.5

V

VI(on)

Input-On Voltage

VCE = -0.2 V, IC = -5 mA

-1.3

V

R1

Input Resistor

3.2

4.7

6.2

k

Ω

R1/R2

Resistor Ratio

0.09

0.10

0.11

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