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PD20010TR-E Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças PD20010TR-E
Descrição Electrónicos  RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD20010TR-E Folha de dados(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2012
Doc ID 15514 Rev 2
1/13
13
PD20010-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet — production data
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European
directive
Description
The PD20010-E is a common source N-Channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD20010-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD20010-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Figure 1.
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1.
Device summary
Order codes
Packages
Packing
PD20010-E
PowerSO-10RF (formed lead)
Tube
PD20010S-E
PowerSO-10RF (straight lead)
Tube
PD20010TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD20010STR-E
PowerSO-10RF (straight lead)
Tape and reel
www.st.com


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