AT-32011 datasheet(4/10 Pages) HP

Nome de Peças	AT-32011

Descrição Electrónicos	Low Current, High Performance NPN Silicon Bipolar Transistor

Download	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	HP [Agilent(Hewlett-Packard)]

Página de início	http://www.home.agilent.com

Logo

4 / 10 page

4-56

-50

0

TEMPERATURE (°C)

50

25

10

5

0

100

15

20

0

2.5

1.0

0.5

1.5

2.0

Ga

NF

-50

0

TEMPERATURE (°C)

50

25

10

5

0

100

15

20

0

2.5

1.0

0.5

1.5

2.0

Ga

NF

0

FREQUENCY (MHz)

1.0

1.5

25

10

5

0.5

2.5

15

2.0

20

2 mA

5 mA

10 mA

20 mA

Figure 14. AT-32011 Noise Figure and

Associated Gain at VCE = 2 .7 V,

IC = 2 mA vs. Temperature in Test

Circuit, Figure 1. (Circuit Losses

De-embedded).

Figure 15. AT-32033 Noise Figure and

Associated Gain at VCE = 2 .7 V,

IC = 2 mA vs. Temperature in Test

Circuit, Figure 1. (Circuit Losses

De-embedded).

Figure 16. AT-32011 and AT-32033

Third Order Intercept vs. Frequency

and Bias at VCE = 2 .7 V, with Optimal

Tuning.

0

-5

FREQUENCY (GHz)

1.0

1.5

10

0

-2.5

0.5

2.5

2.0

7.5

2 mA

5 mA

5

0

FREQUENCY (GHz)

1.0

1.5

20

10

5

0.5

2.5

15

2.0

2 mA

5 mA

0

FREQUENCY (GHz)

1.0

1.5

20

10

5

0.5

2.5

15

2.0

2 mA

5 mA

Figure 11. AT-32011 and AT-32033

Power at 1 dB Gain Compression vs.

Frequency and Current at VCE = 1 V.

Figure 12. AT-32011 1 dB Compressed

Gain vs. Frequency and Current at

VCE = 1 V.

Figure 13. AT-32033 1 dB Compressed

Gain vs. Frequency and Current at

VCE = 1 V.

Figure 8. AT-32011 and AT-32033

Power at 1 dB Gain Compression vs.

Frequency and Current at VCE = 5 V.

Figure 9. AT-32011 1 dB Compressed

Gain vs. Frequency and Current at

VCE = 5 V.

Figure 10. AT-32033 1 dB Compressed

Gain vs. Frequency and Current at

VCE = 5 V.

0

-5

FREQUENCY (GHz)

1.0

1.5

20

5

0

0.5

2.5

10

2.0

15

2 mA

5 mA

10 mA

20 mA

0

FREQUENCY (GHz)

1.0

1.5

20

10

5

0.5

2.5

15

2.0

2 mA

5 mA

10 mA

20 mA

0

FREQUENCY (GHz)

1.0

1.5

20

10

5

0.5

2.5

15

2.0

2 mA

5 mA

10 mA

20 mA

AT-32011, AT-32033 Typical Performance

Nº de peça semelhante - AT-32011

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
AVAGO TECHNOLOGIES LIMI...	AT-32011	297Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	AT-32011	297Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor

More results

Descrição semelhante - AT-32011

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Agilent(Hewlett-Packard...	AT-32063	86Kb / 8P	Low Current, High Performance NPN Silicon Bipolar Transistor
AVAGO TECHNOLOGIES LIMI...	AT-32011	297Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
AVAGO TECHNOLOGIES LIMI...	AT-32032	1Mb / 14P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	AT-32063	218Kb / 8P	Low Current, High Performance NPN Silicon Bipolar Transistor
	AT-32011	297Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
	AT-32032	1Mb / 14P	Low Current, High Performance NPN Silicon Bipolar Transistor
Agilent(Hewlett-Packard...	AT-30511	101Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
Agilent(Hewlett-Packard...	AT-31011	137Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
AVAGO TECHNOLOGIES LIMI...	AT-31011	274Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	DEMO-AT32063	218Kb / 8P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	AT-31011	274Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor

More results

AT-32011 Folha de dados(PDF) 4 Page - Agilent(Hewlett-Packard)

AT-32011 Folha de dados(HTML) 4 Page - Agilent(Hewlett-Packard)

Nº de peça semelhante - AT-32011

Descrição semelhante - AT-32011

Html Pages

1 2 3 4 5 6 7 8 9 10

Folha de dados Download

Ligação URL